Method of preparing semiconductor surface

Details Method of preparing semiconductor surface Method of preparing semiconductor surface

1998-01-08

2000-05-23

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438747, H01L 21302

Patent

active

060665718

ABSTRACT:
A method of preparing a semiconductor work surface comprises the steps of forming an Si monocrystaline substrate including a semiconductor work surface, removing by wet-etching a silicon oxide film formed on the work surface, using HF solution, and washing the work surface by pure water, serving as a washing liquid, of a dissolved oxygen concentration of 500 ppb or lower. The work surface is made of monocrystal and has an orientation a certain amount off the (001) plane. The certain amount is set such that an axis of the work surface has a component inclined with an angle of from 1.degree. to 5.degree. from the [001] direction to a <010> direction. The washing liquid of pure water has a property of etching the Si monocrystal, such that a single or a plurality of surfaces, including the (111) plane, can be preferentially exposed.

REFERENCES:
patent: 4861418 (1989-08-01), Nishimura et al.
patent: 5587103 (1996-12-01), Dennis
Y. Morita et al., "Ideal Hydrogen Termination of Si (001) Surface by Wet-Chemical Preparation", Applied Physics Letters, 67 (18) :2654-2656 (1995).
U. Neuwald et al., "Wet Chemical Etching of Si (100) Surfaces in Concentrated NH.sub.4 F Solution: Formation of (2x1) H Reconstructed Si (100) Terraces Versus (111) Facetting", Surface Science Letters 296:L8-L13 (1993).
Silicon Processing for the VLSA Era, S. Wolfe, Chapter 1: Single Crystal Growth and Wafer Preparation, pp. 1-7; 23-30; 55-56, 1990.

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