Method of preparing multi-layer semiconductor hetero-structures

Details Method of preparing multi-layer semiconductor hetero-structures Method of preparing multi-layer semiconductor hetero-structures

1974-06-24

1976-04-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, 252 623GA, 204 39, 204 61, 156602, H01L 738

Patent

active

039486923

ABSTRACT:
The method of preparing multi-layer semiconductor heterostructures on the basis of compounds A.sup.III B.sup.V, where A.sup.III is an element of the third group and B.sup.V is an element of the fifth group, consists in crystallization of layers of this heterostructure on a substrate from a liquid zone which is gallium or bismuth pre-saturated with compounds A.sup.III B.sup.V from a source which is a solid solution of compounds A.sup.III B.sup.V feeding the liquid zone with the material of the crystallizing layers.

REFERENCES:
patent: 2999776 (1961-09-01), Dorendorf et al.
patent: 3411946 (1968-11-01), Tramposch
J. of the Electrochemical Society, Vol. 120, No. 4, Apr. 1973, pp. 583 and 584.

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