Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-01-18
2011-01-18
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S013000, C257SE21123, C257SE33025
Reexamination Certificate
active
07871843
ABSTRACT:
The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.
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Doradzinski Roman
Dwilinski Robert
Garczynski Jerzy
Kanbara Yasuo
Sierzputowski Leszek
Ammono. Sp. z o.o.
Nichia Corporation
Weiss Howard
Westerman Hattori Daniels & Adrian LLP
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