Method of preparing indium ingots

Details Method of preparing indium ingots Method of preparing indium ingots

1985-10-21

1986-11-04

Bernstein, Hiram H.

Chemistry: physical processes

Physical processes

156DIG111, 156638, H01L 21306

Patent

active

046208542

ABSTRACT:
In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

REFERENCES:
patent: 3677228 (1972-07-01), Panish et al.
patent: 3890194 (1975-06-01), Ettenberg

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