Method of preparing high-temperature-stable thin-film resistors

Details Method of preparing high-temperature-stable thin-film resistors Method of preparing high-temperature-stable thin-film resistors

1980-11-12

1983-07-05

Silverberg, Sam

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427101, 427255, 4272552, 252518, C23C 1108

Patent

active

043918468

ABSTRACT:
A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

REFERENCES:
patent: 3540920 (1970-11-01), Wakefield
patent: 3563873 (1971-02-01), Beyer
Vapor Deposition, Powell, 1966, pp. 322-325, 403, 596-597.

Affiliated with

Also associated with

Rating

Method of preparing high-temperature-stable thin-film resistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of preparing high-temperature-stable thin-film resistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of preparing high-temperature-stable thin-film resistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1439962