Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reissue Patent
2007-08-21
2007-08-21
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S083000, C117S004000, C117S006000, C117S007000, C117S953000
Reissue Patent
active
09824965
ABSTRACT:
A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible within an airtight vessel formed of a gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.
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Kawase Tomohiro
Tatsumi Masami
Fish & Richardson P.C.
Kunemund Robert
Sumitomo Electric Industries Ltd.
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