Method of preparing group III-V compound semiconductor crystal

Details Method of preparing group III-V compound semiconductor crystal Method of preparing group III-V compound semiconductor crystal

1997-04-25

1999-12-28

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 83, 117 4, 117 6, 117 7, 117953, C30B 1104

Patent

active

060076224

ABSTRACT:
A method is provided for preparing, with high reproducibility, a carbon-doped group III-V compound semiconductor crystal having favorable electrical characteristics and having impurities removed therefrom, and in which the amount of doped carbon can be adjusted easily during crystal growth. This method includes the steps of: filling a crucible with compound raw material, solid carbon, and boron oxide; sealing the filled crucible gas impermeable material; heating and melting the compound raw material under the sealed state in the airtight vessel; and solidifying the melted compound raw material to grow a carbon-doped compound semiconductor crystal.

REFERENCES:
patent: 4999082 (1991-03-01), Kremer et al.
patent: 5131975 (1992-07-01), Bourret-Courchesne
patent: 5515810 (1996-05-01), Yamashita
Journal of Japanese Association of Crystal Growth, Y. Okabe et al. Undoped Semi-Insulating GaAs Single Crystals Grown by VGF Method, vol. 18, 1991, pp. 88-95.
"Low dislocation density and low residual strain semi insulating GaAs grown by vertical boat method". Kawase, T. (Apr. 1996).

Affiliated with

Also associated with

Rating

Method of preparing group III-V compound semiconductor crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of preparing group III-V compound semiconductor crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of preparing group III-V compound semiconductor crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2379580