Method of preparing group II-VI or III-V compound single crystal

Details Method of preparing group II-VI or III-V compound single crystal Method of preparing group II-VI or III-V compound single crystal

1996-05-24

1998-11-03

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 81, 427226, C30B 1318

Patent

active

058302697

ABSTRACT:
A method is provided for industrially preparing a group II-VI or III-V compound single crystal from a polycrystalline group II-VI or III-V starting compound, such that the resultant single crystal has a small number of crystal defects by effectively preventing polycrystallization. The method includes steps of coating an inner surface of a crucible with a film consisting of powdered solids and a vitreous substance, placing the polycrystalline compound in the coated crucible, placing the crucible in a furnace, heating the crucible with furnace for melting the polycrystalline compound in the crucible, and cooling the crucible and the melted compound for growing a single-crystalline compound. Additionally, the surface of a seed crystal and a gap between the seed crystal and a wall of the crucible may also be coated with a film of powdered solids and a vitreous substance.

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