Method of preparing diffused silicon device substrate

Details Method of preparing diffused silicon device substrate Method of preparing diffused silicon device substrate

1993-09-22

1994-05-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 12, 437248, 437914, 148DIG126, H01L 21324

Patent

active

053087895

ABSTRACT:
In a method of preparing a diffused silicon device substrate for use in the fabrication of a MOS power device, a drive-in diffusion step is followed by a thermal donor formation heat treatment which is achieved by heating the silicon device substrate at a temperature from 400.degree. to 500.degree. C. for 1 to 20 hours and in a gas atmosphere containing oxygen gas, and subsequently a thermal donor formation retarding heat treatment is performed by heating the silicon device substrate at a temperature of from 600.degree. to 700.degree. C. for 8 to 24 hours in a gas atmosphere containing oxygen gas.

REFERENCES:
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4437922 (1984-03-01), Bischoff et al.
patent: 4459159 (1984-07-01), O'Mara
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 5210056 (1993-05-01), Pong et al.
patent: 5254484 (1993-10-01), Hefner et al.

Affiliated with

Also associated with

Rating

Method of preparing diffused silicon device substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of preparing diffused silicon device substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of preparing diffused silicon device substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2114810