Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Crucibleless process having movement of discrete droplets or...
Reexamination Certificate
2000-09-26
2001-05-22
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Crucibleless process having movement of discrete droplets or...
C117S901000, C117S914000
Reexamination Certificate
active
06235109
ABSTRACT:
BACKGROUND OF THE INVENTION
This invention relates to a method of preparing a high quality crystalline or amorphous material by solidification of a melt of a metal-containing material.
A method is known in which a melt of a metal-containing material such as a semiconductor is quenched to form an amorphous film. A roller, a plate or a rotatable drum is generally used for quenching at a rate of 10
4
to 10
8
° C. per second. The amorphous film is heat treated for crystallization. The crystalline film thus obtained, however, is not uniform in composition and texture.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide a simple method which can prepare a high quality crystalline or amorphous material by solidification of a melt of a metal-containing material.
In accordance with the present invention there is provided a method of preparing a crystalline or amorphous material, comprising the steps of:
(a) forming a droplet of a melt of a metal-containing material; and
(b) cooling the droplet in the atmosphere of an inert gas or in vacuum and in a microgravity environment to solidify the droplet, wherein the cooling is performed by impingement of the droplet against a cooling surface prior to solidification.
The above method can be carried out in a space shuttle in orbit.
Alternatively, the above step (b) may be carried out by combination of the following sub-steps (b1) and (b2):
(b1) the droplet is permitted to free fall with an initial velocity of substantially zero, and
(b2) then, before the droplet is solidified, the droplet is allowed to impinge on the cooling surface to solidify the droplet.
The above free fall may be performed using a falling capsule. Thus, in step (a) the droplet is formed in a closed capsule in which the cooling surface is fixedly secured. In sub-step (b1), the capsule is allowed to free fall with an initial velocity of substantially zero. In step (b2), the capsule is stopped falling so that the droplet impinges on the cooling surface.
Other objects, features and advantages of the present invention will become apparent from the detailed description of the invention to follow.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS OF THE INVENTION
For the preparation of a crystalline or amorphous material, any substance capable of forming a crystalline or amorphous material from a melt may be used as a raw material. Thus, metallic elements, metal compounds, metalloids, alloys, semiconductors and ceramics may be used for the purpose of the present invention. Illustrative of suitable raw material substances are Ti, Fe, Si, Ge, a Ti—Ni alloy, a Cu—Al alloy, a Cu—In alloy, indium antimonide (In—Sb), Fe—Si, Cu—In—Se and metal garnet composite materials such as yttrium aluminum garnet. The raw material may be in the form of a powder, a lump or a film. The raw material generally has a melting point of at least 100° C., preferably at least 500° C. The upper limit of the melting point is not specifically restricted but is generally about 2500° C.
The metal-containing material is placed in vessel such as a crucible and heated using any suitable heater, such as an electric furnace, an infrared heater, an electronic oven or an electromagnetic levitation heater, to form a melt. The melt is formed in a suitable atmosphere determined according to the kind of the metal-containing material. For example, a non-oxidizing atmosphere is adopted when the-metal-containing material is susceptible to oxidation. When the metal-containing material is an oxide, an oxidizing atmosphere may be used. Thus, the melt may be prepared in an inert atmosphere such as in the atmosphere of argon or helium; under vacuum of 2660 Pa or less, preferably 133 Pa or less; or in an active atmosphere such as in the atmosphere of hydrogen or oxygen. When the metal-containing material contains a substance having a high vapor pressure, a pressurized condition may be adopted for the formation of a melt thereof.
The melt is then formed into a droplet or droplets. By providing a small diameter hole or orifice in a bottom of a container containing the melt, the melt flows out of the container through the hole and forms a droplet attached to the hole. The droplet is then released from the hole and is allowed to free fall or to be suspended. For the purpose of facilitating the formation of the droplet, a pressure, such as a gas pressure, may be applied to the melt. Alternatively, the vessel may be vibrated. However, it is important that the droplet should have an initial velocity of substantially zero.
The diameter of the droplet is determined according to the size of the hole, the viscosity of the melt, the wettability of the melt relative to the surface of the vessel and the specific gravity of the melt. Generally, the droplet has a diameter in the range of 0.1-50 mm, preferably 2-10 mm.
The droplet of the melt is cooled in the atmosphere of an inert gas or in vacuum and in a microgravity environment to solidify the droplet, wherein the cooling is performed by impingement of the droplet prior to solidification against a cooling surface.
In a first embodiment, the above solidification may be carried out by allowing the droplet to free fall. The atmosphere in which the droplet falls may be the same as that used for the formation of the melt but, preferably, vacuum of 2660 Pa or less, more preferably 133 Pa or less, is used. The free falling droplet then impinges upon a cooling surface so that the solidification starts at a point or area in which the droplet of the melt is brought into contact with the cooling surface.
The distance between the hole from which the droplet is released and the cooling surface should be such that the droplet can undergo free fall. Thus, the distance of the free fall will normally be from greater than 0 to about 50000 times the diameter of the droplet. It is important that the solidification of the droplet of the melt should start after the droplet has been brought into contact with the cooling surface. Therefore, an excessively long distance of the free fall should be avoided. The distance of the free fall may be determined in view of the melting point of the metal-containing material from which the melt is prepared, the temperature of the droplet of the melt, the degree of supercooling of the droplet caused during the free fall and the radiation of heat from the surface of the droplet during the free fall. The optimum free fall distance will be determined by preparatory experiments.
The cooling surface against which the droplet of the melt impinges may be flat or curved and may be made of any suitable material such as a metal (e.g. copper, iron or an alloy) or ceramic (e.g. glass or aluminum nitride) which does not melt upon contact with the droplet. The cooling surface is generally maintained at a temperature lower by at least 100° C., preferably by 500-2500° C., than the melting point of the droplet.
The droplet of the melt begins solidifying upon contact with the cooling surface to form a crystalline material. The shape of the crystalline material depends upon the shape of the cooling surface. When the cooling surface is flat and is disposed horizontally, the crystalline product will be in the form of a thin film whose area and thickness depend upon the temperature, viscosity and falling velocity of the droplet at the time of the impingement as well as the temperature of the cooling surface.
Since the droplet is maintained as if it were in a microgravity environment during the free fall, convection of heat does not occur in the droplet. Thus, the droplet is homogeneous and the solidified material is homogeneous, too. The solidification of the droplet starts at a point thereof which is first brought into contact with the cooling surface. The solidification proceeds radially outward from the contact point as the contact area propagates. Therefore, the solidification proceeds without causing a stress in the solidifying material, so that the resulting crystalline material has no defects.
In another embodiment according to the present invention, the dropl
Minagawa Hideki
Nagai Hideaki
Nakata Yoshinori
Okutani Takeshi
Orihashi Masaki
Anderson Matthew
Kunemund Robert
Lorusso & Loud
Okutani Takeshi
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