Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1998-06-08
2000-09-05
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 85, 117106, 117107, 117108, 117109, C30B 2502
Patent
active
061136905
ABSTRACT:
A method of preparing crystalline alkaline earth metal oxides on a Si substrate wherein a Si substrate with amorphous silicon dioxide on a surface is provided. The substrate is heated to a temperature in a range of 700.degree. C. to 800.degree. C. and exposed to a beam of alkaline earth metal(s) in a molecular beam epitaxy chamber at a pressure within approximately a 10.sup.-9 -10.sup.-10 Torr range. During the molecular beam epitaxy the surface is monitored by RHEED technique to determine a conversion of the amorphous silicon dioxide to a crystalline alkaline earth metal oxide. Once the alkaline earth metal oxide is formed, additional layers of material, e.g. additional thickness of an alkaline earth metal oxide, single crystal ferroelectrics or high dielectric constant oxides on silicon for non-volatile and high density memory device applications.
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Abrokwah Jonathan K.
Droopad Ravi
Hallmark Jerald A.
Overgaard Corey D.
Yu Zhiyi (Jimmy)
Anderson Matthew
Koch William E.
Motorola Inc.
Parsons Eugene A.
Utech Benjamin L.
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