Method of preparing compound semiconductor crystal

Details Method of preparing compound semiconductor crystal Method of preparing compound semiconductor crystal

1996-09-19

1998-03-17

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 2, 117937, C30B 1502

Patent

active

057282129

ABSTRACT:
A compound semiconductor crystal has a reduced dislocation density. The compound semiconductor crystal doped with an impurity satisfies the following relations, wherein c.c. represents its carrier concentration and .eta. represents its activation factor:

REFERENCES:
patent: 5463978 (1995-11-01), Larkin

Affiliated with

Also associated with

Rating

Method of preparing compound semiconductor crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of preparing compound semiconductor crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of preparing compound semiconductor crystal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-954190