Method of preparing compound semiconductor

Details Method of preparing compound semiconductor Method of preparing compound semiconductor

1993-06-01

1997-04-22

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117954, C30B 2500

Patent

active

056225598

ABSTRACT:
The vapor phase growth method of the group III-V compound semiconductor thin-film, using hydrides and organic metals containing no halogen elements as a raw material for the growth, is disclosed. The method is carried out by alternately introducing group III organic metals raw material gas as well as halides gas and/or halogens gas into a growth chamber, and also by repeating the introducing to grow a thin-film. In accordance with the present invention, it is possible to obtain such high-quality crystal growth as the planarization of hetero junction interface, the improvement of surface morphology or facet, and no deposit of polycrystals on the mask in a wide range.

REFERENCES:
patent: 4916089 (1990-04-01), Van Suchter et al
patent: 5178718 (1993-01-01), DeKeijser et al.
patent: 5250148 (1993-10-01), Nishizawa et al.
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5296088 (1994-03-01), Kodama
patent: 5300185 (1994-04-01), Hori et al.

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