Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-03-29
1992-07-14
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505732, 427 62, 427 531, 427309, B05D 512, B05D 306, B05D 310
Patent
active
051302969
ABSTRACT:
When an oxide superconducting thin film is formed on a substrate by a vapor phase method such as laser ablation, for example, a plurality of grooves are formed on the substrate by photolithography or beam application in the same direction with an average groove-to-groove pitch of not more than 10 .mu.m, so that the oxide superconducting thin film is formed on a surface provided with such a plurality of grooves. Thus promoted is growth of crystals of the oxide superconducting thin film in parallel with the grooves, whereby respective directions of a-axes and c-axes are regulated to some extent. This improves critical current density of the oxide superconducting thin film.
REFERENCES:
Venkatesan et al, "High-temperature superconductivity in ultra thin films of Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x ", Appl. Phys. Lett. 54(6) Feb. 1989, pp. 581-583.
M. R. Beasley, "High-Temperature Superconductive Thin Film", Proceedings of the EEE, vol. 77, No. 8, Aug. 1989, pp. 1155-1163, New York, US.
J. H. Magerlin et al. "Control of Thin Film Grain Size by Lithographic Methods", IBM Technical Disclosure Bulletin, vol. 24, No. 4, Sep. 1981, pp. 1974-1975.
Hayashi Noriki
Okuda Shigeru
Sato Ken'ichi
Takano Satoshi
Yoshida Noriyuki
Beck Shrive
King Roy V.
Sumitomo Electric Industries Ltd.
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