Method of preparing a tin oxide layer

Details Method of preparing a tin oxide layer Method of preparing a tin oxide layer

2005-04-21

2010-02-16

Kopec, Mark (Department: 1796)

Coating processes

Electrical product produced

Metallic compound coating

C427S255230, C252S520100

Reexamination Certificate

active

07662431

ABSTRACT:
Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxide or it may be doped polycrystalline p-type tin oxide. When the layer of tin oxide is formed on a crystalline substrate, substantially crystalline tin oxide is formed. Dopant precursors for producing doped p-type tin oxide are also disclosed.

REFERENCES:
patent: 4601917 (1986-07-01), Russo et al.
patent: 5057244 (1991-10-01), Nitta et al.
patent: 6533965 (2003-03-01), Sasaki et al.
Abstract—“Studies on Optical Properties of Polycrystalline SnO2:Sb Thin Films”, Crystal Research and Technocoly, 2003, 38(9), Elangovan et al.
Abstract—“Mechanisism of Gas Detection in Polycrystalline Thick Film Tin dioxide Sensors”, Thin Solid Films, 1989, 171 (1), Barsan et al.

Affiliated with

Also associated with

Rating

Method of preparing a tin oxide layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of preparing a tin oxide layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of preparing a tin oxide layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4151588