Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-06-13
2006-06-13
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S767000, C438S931000
Reexamination Certificate
active
07060620
ABSTRACT:
The invention concerns a method of preparing the surface of a semiconductor wafer intended for microelectronics and/or optoelectronics applications. In particular, a method of preparing a SiC surface of a semiconductor wafer to make it epiready is described. The technique includes annealing the wafer in an oxidizing atmosphere, and polishing a surface of the wafer with an abrasive based on particles of colloidal silica to make the SiC wafer surface suitable for homoepitaxy or heteroepitaxy.
REFERENCES:
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5895583 (1999-04-01), Augustine et al.
patent: 6136727 (2000-10-01), Ueno
patent: 6537606 (2003-03-01), Allen et al.
patent: 2002/0061651 (2002-05-01), Tani et al.
patent: 2005/0042800 (2005-02-01), Yamada et al.
patent: 0 966 034 (1999-12-01), None
patent: 02-09869 (2002-08-01), None
Derwent Acc. No. 1996-007979, Fuji Electric Co LTD, Oct. 31, 1995.
Bruel, M. et al., “Smart-Cut”: A Promising New SOI Material Technology, IEEE SOI Conference, Oct. 1995, pp 178-179.
Maleville et al., “Wafer Bonding and H-Implantation Mechanisms Involved In The Smart-Cut Technology”, Materials Science and Engineering, 1997, pp. 14-19.
A. J. Auberton-Hervé et al., “Why Can SMART-CUT® Change the Future of Microelectronics?”, International Journal of High Speed Electronics and Systems, vol. 10, No. 1, 2000, pp 131-146.
“Thermal and Dopant Processes”, Chapter 4, Advanced Semiconductor Fabrication Handbook, ICE, 1998.
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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