Method of preparing a semiconductor device

Details Method of preparing a semiconductor device Method of preparing a semiconductor device

1984-06-07

1985-12-24

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

148187, 148190, 29571, 427 93, H01L 2138

Patent

active

045605823

ABSTRACT:
A semiconductor device including a MOS field effect transistor formed on a single silicon crystal substrate having source and drain diffused regions of reduced depth. In order to avoid penetration of aluminum from the aluminum connector through the diffused region into the substrate, the diffused region is formed by double diffusion of at least two types of impurities of the same conductive type, but having different diffusion coefficients with respect to each other.

REFERENCES:
patent: 4080618 (1976-09-01), Tango
patent: 4292728 (1981-10-01), Endo
patent: 4294002 (1981-10-01), Jambotkar
patent: 4299862 (1981-11-01), Donley

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