Method of preparing a self-passivating Cu laser fuse

Details Method of preparing a self-passivating Cu laser fuse Method of preparing a self-passivating Cu laser fuse

2005-01-18

2005-01-18

Eckert, George (Department: 2815)

Semiconductor device manufacturing: process

Direct application of electrical current

To alter conductivity of fuse or antifuse element

C438S281000, C438S468000, C438S554000, C438S601000, C438S687000

Reexamination Certificate

active

06844245

ABSTRACT:
A method of forming a semiconductor device, such as a self-passivating fuse, includes patterning an opening in a dielectric to form a fuse. A seed-layer of a copper-alloy is deposited in the opening and the opening is filled with pure copper. The copper is planarized and a passivation layer is deposited. This passivation layer can be thinned over a fuse portion of the copper. The fuse portion can then be laser fused to form a crater in an area surrounding a blown copper fuse. Exposed portions of the pure copper can then be self-passivated by annealing the device.

REFERENCES:
patent: 5622608 (1997-04-01), Lanford et al.
patent: 6057223 (2000-05-01), Lanford et al.
patent: 6066892 (2000-05-01), Ding et al.
patent: 6111301 (2000-08-01), Stamper
patent: 6180503 (2001-01-01), Tzeng et al.
patent: 6249055 (2001-06-01), Dubin
patent: 6295721 (2001-10-01), Tsai
patent: 20010042897 (2001-11-01), Yeh et al.
patent: 20030116820 (2003-06-01), Daubenspeck et al.

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