Method of preparing a compound semiconductor crystal

Details Method of preparing a compound semiconductor crystal Method of preparing a compound semiconductor crystal

2011-04-12

2011-04-12

Tran, Binh X (Department: 1713)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S076000, C117S077000, C117S081000, C117S083000

Reissue Patent

active

RE042279

ABSTRACT:
A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3to 20×1015cm−3is prepared with high reproducibility.

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