Method of preparation of SOS extrinsic infrared detector and rea

Details Method of preparation of SOS extrinsic infrared detector and rea Method of preparation of SOS extrinsic infrared detector and rea

1977-08-03

1978-07-18

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 250370, 357 24, B01J 1700

Patent

active

041006720

ABSTRACT:
A silicon-on-sapphire, or silicon-on-spinel (SOS), epitaxial detector and readout structure and method of preparation. The present structure comprises silicon devices formed on sapphire, or spinel, substrates in which delineated silicon detectors, and electrically and optically isolated charge-coupled devices (CCDs), are used for signal readout from the detectors. The structure may be placed at the focal plane of an imaging infrared (IR) system for signal readout therefrom.

REFERENCES:
patent: 3762038 (1973-10-01), Ruggiero
patent: 3849651 (1974-11-01), Ennulat
patent: 3883437 (1975-05-01), Nummedal
IEE Transactions on Electron Devices, "An Infared . . . Photodetectors," by erritsen, vol. 18, No. 11, Nov. 1971, pp. 1011-1015.

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