Method of preparation of a semiconducting ternary alloy from the

Details Method of preparation of a semiconducting ternary alloy from the Method of preparation of a semiconducting ternary alloy from the

1974-09-11

1976-05-25

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, 427 66, H01L 21265

Patent

active

039590267

ABSTRACT:
A wafer of the semiconducting compound ZnTe is subjected to at least one bombardment by a magnesium ion flux, the energy and density of the bombardment or bombardments being such as to obtain a desired concentration of magnesium ions in the portion of the semiconductor to be doped and this is followed by a thermal annealing operation, the concentration of magnesium being such as to obtain an alloy having the formula Mg.sub.X Zn.sub.1.sub.-X Te with 0<X<1.

REFERENCES:
patent: 3658582 (1972-04-01), Coker et al.
patent: 3732471 (1973-05-01), Hou et al.
parker et al., "Preparation and Properties of MgZnTe", J. Electrochem. Soc., Vol. 118, No. 6, June 1971, pp. 979-983.

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