Data processing: structural design – modeling – simulation – and em – Simulating nonelectrical device or system
Reexamination Certificate
2011-04-05
2011-04-05
Craig, Dwin M (Department: 2123)
Data processing: structural design, modeling, simulation, and em
Simulating nonelectrical device or system
Reexamination Certificate
active
07920999
ABSTRACT:
Internal gettering behavior in a silicon substrate is predicted by using an arithmetic expression established among an initial iron contamination concentration Ciniin the silicon substrate, a density N of oxygen precipitates, a radius R of the oxygen precipitates, internal gettering heat treatment temperature T, internal gettering heat treatment time t, and a concentration C(t) of iron (Fe) remaining in the silicon substrate after a heat treatment. In the prediction of internal gettering behavior in the silicon substrate, an arithmetic expression is added considering a process in which nuclei of a contaminant heavy metal silicide are generated on the surface of the oxygen precipitates, and a process in which the contaminant heavy metal is gettered by the oxygen precipitates having the contaminant heavy metal silicide nuclei generated on the surface thereof. This invention is also applicable for internal gettering of a contaminant heavy metal other than iron (Fe), such as copper (Cu), nickel (Ni) or the like.
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Craig Dwin M
Husch Blackwell
Sumco Techxiv Corporation
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