Method of post-processing solid-state imaging device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

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438 64, 438 67, 438 68, 257724, 2502081, H01L 2100

Patent

active

060460709

ABSTRACT:
A method of post-processing a solid-state imaging device including a wafer processing step 1 (S1), an assembly step 2 (S2) in which packaging is performed, an inspection step 3 (S3), and an annealing step (S4) in which a solid-state having gone through the inspection step 3 is annealed at a predetermined temperature. The method makes it possible to reduce the level of an image defect that occurs after assembly.

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patent: 4987477 (1991-01-01), Ikeno
patent: 5334829 (1994-08-01), Ueno et al.

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