Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...
Reexamination Certificate
2005-04-12
2005-04-12
Goudreau, George A. (Department: 1763)
Etching a substrate: processes
Nongaseous phase etching of substrate
Using film of etchant between a stationary surface and a...
C438S005000, C438S692000, C451S005000, C451S057000
Reexamination Certificate
active
06878302
ABSTRACT:
The method comprises the steps of mounting a first wafer (13) on the mounting member (12) and securing the mounting member to the hub (16) by drawing a vacuum at a first vacuum pressure through the hub; rotating the hub about the hub axis (AH), rotating a polishing pad (34) mounted on the turntable (30) about the turntable axis (at), and bringing a surface of the wafer (13) and the polishing pad into contact with each other. The wafer (16) is demounted, and the shape of the polished wafer is determined. A second vacuum pressure is selected using the information obtained. A successive wafer is polished according to the same method as the first wafer except that the second vacuum pressure is substituted for the first vacuum pressure. The second vacuum pressure is sufficient to deform the mounting member (12) thereby deform the wafer to improve the flatness and parallelism of the surfaces of the successive wafer.
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International Search Report from the European Patent Office dated Mar. 20, 2001(mailed Apr. 4, 2001).
Bovio Ezio
Corbellini Paride
Moiraghi Luca
Negri Giovanni
Goudreau George A.
MEMC Electronic Materials SpA
Senniger Powers
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