Method of polishing semiconductor wafer

Details Method of polishing semiconductor wafer Method of polishing semiconductor wafer

2006-07-04

2006-07-04

Nguyen, Dung Van (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

Computer controlled

C451S041000

Reexamination Certificate

active

07070477

ABSTRACT:
In a wafer polishing method, a within-wafer distribution model of a removal rate and a within-wafer distribution model of a polishing process are selected, and a within-wafer distribution of a removal rate is obtained by determining parameters of a within-wafer distribution model of a removal rate based on the within-wafer distribution of the film thickness before/after CMP, polishing condition data, and the selected within-wafer distribution model of the polishing process of the polished wafer. Then, a film thickness in the polishing process is estimated from passage of time based on the obtained within-wafer distribution of the removal rate, the selected within-wafer distribution model of the polishing process, and the film thickness before CMP of the wafer to be processed, thereby determining the polishing conditions with a restriction that the film thickness at each position in the within-wafer distribution of the film thickness after CMP satisfies the control limit.

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