Method of polishing a wafer

Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...

Reexamination Certificate

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C216S088000, C216S090000, C216S091000, C216S092000, C438S692000, C451S041000

Reexamination Certificate

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07449124

ABSTRACT:
A method for polishing a wafer comprising an aqueous solution having a pH in the range of 6 to 8, wherein the aqueous solution comprises at least one compound selected from the group consisting of a polymethacrylic acid, a polysulfonic acid, and combinations thereof, and wherein the compound is present in the range of 1.5 to 4 percent by weight of the aqueous solution. The wafer polishing solution can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive CMP process.

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