Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-07-24
2007-07-24
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000
Reexamination Certificate
active
10869397
ABSTRACT:
The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.
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Khanna Dinesh N.
Simpson Alexander
Vacassy Robert
Cabot Microelectronics Corporation
Koszyk Frank
Omholt Thomas
Tran Thanh Yen
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