Method of polishing a semiconductor substrate during production

Details Method of polishing a semiconductor substrate during production Method of polishing a semiconductor substrate during production

1996-05-20

1998-03-17

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

216 89, 1566361, C23F 300

Patent

active

057283087

ABSTRACT:
A chemical mechanical polishing slurry comprised of particulates of metal oxide material including at least two metals with oxides having significantly different points of zero charges dispersed in pure water; a method of production of a chemical mechanical polishing slurry including a step of using two or more types of organometallic compounds comprised of at least two types of metal atoms with oxides having significantly different points of zero charges bonded with oxygen atoms for emulsion polymerization so as to form particulates including metal oxide material and a step of dispersing the particulates in pure water; a method of polishing using the chemical mechanical polishing slurry for chemical mechanical polishing of a polishing surface of a substrate so as to smooth the substrate; and a method of producing of a semiconductor device including a step of using the chemical mechanical polishing slurry for chemical mechanical polishing of a polishing surface of a substrate so as to smooth the substrate.

REFERENCES:
patent: 4608293 (1986-08-01), Wada et al.
patent: 5525191 (1996-06-01), Maniar et al.
patent: 5527423 (1996-06-01), Neville et al.

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