Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-06-07
2005-06-07
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S693000, C216S088000, C216S089000, C451S057000
Reexamination Certificate
active
06903021
ABSTRACT:
The present invention provides a method of polishing a semiconductor device comprising, polishing the semiconductor device with a polishing pad, the polishing pad comprising, a polymeric matrix and a dissolvable substance. The dissolvable substance is located at a work surface of the polishing pad and in a subsurface proximate the work surface. The method further comprises dissolving the dissolvable substance at the work surface while polishing the semiconductor device and wearing away the polishing pad while polishing the semiconductor device such that the subsurface becomes a new work surface that polishes the semiconductor device.
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Budinger William D.
Jensen Elmer William
McClain Harry George
Reinhardt Heinz F.
Roberts John V. H.
Goudreau George A.
Oh Edwin
Rohm and Haas Electronic Materials CMP Holdings Inc.
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