Method of polishing a semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S693000, C216S088000, C216S089000, C451S057000

Reexamination Certificate

active

06903021

ABSTRACT:
The present invention provides a method of polishing a semiconductor device comprising, polishing the semiconductor device with a polishing pad, the polishing pad comprising, a polymeric matrix and a dissolvable substance. The dissolvable substance is located at a work surface of the polishing pad and in a subsurface proximate the work surface. The method further comprises dissolving the dissolvable substance at the work surface while polishing the semiconductor device and wearing away the polishing pad while polishing the semiconductor device such that the subsurface becomes a new work surface that polishes the semiconductor device.

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patent: 6790883 (2004-09-01), Ogawa et al.
patent: 2002/0173231 (2002-11-01), Hasegawa et al.
patent: 2003/0060138 (2003-03-01), Hasegawa et al.
patent: 2003/0129931 (2003-07-01), Konno et al.
patent: 2004/0014413 (2004-01-01), Kawahashi et al.
patent: 2004/0063391 (2004-04-01), Hosaka et al.
patent: 2004/0118051 (2004-06-01), Shiho et al.

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