Method of PMOS stacked-gate memory cell programming...

Details Method of PMOS stacked-gate memory cell programming... Method of PMOS stacked-gate memory cell programming...

2005-06-07

2005-06-07

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185140

Reexamination Certificate

active

06903978

ABSTRACT:
A method of programming a PMOS stacked gate memory cell is provided that utilizes a sequence of control gate pulses to obtain the desired potential on the floating gate.

REFERENCES:
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 6714456 (2004-03-01), Ogura et al.

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