Method of plasma processing

Details Method of plasma processing Method of plasma processing

2007-02-27

2007-02-27

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C252S079100

Reexamination Certificate

active

09869277

ABSTRACT:
An SiO2film layer formed at a wafer placed inside a process chamber of an etching device is etched by generating plasma from a process gas containing fluorocarbon which has been introduced into the process chamber. The contents of an etchant and the byproducts are measured through infrared laser absorption analysis. The individual contents thus measured are compared with the contents of the etchant and the byproducts in the plasma corresponding to the increase in the aspect ratio of a contact hole set in advance. The quantity of O2added into the process gas is adjusted to match the measured contents with the predetermined contents. The quantity of O2added into the process gas is continuously increased as the aspect ratio becomes higher. As a result, a contact hole is formed at the SiO2film layer without damaging the photoresist film layer or inducing an etch stop.

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