Method of plasma etching a substrate

Details Method of plasma etching a substrate Method of plasma etching a substrate

1981-11-10

1982-11-02

Powell, William A.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156643, 156644, 156646, 1566591, 156668, 156904, 427 38, 427 431, 430296, 430313, 430317, 204192E, B44C 122, C03C 1500, C03C 2506

Patent

active

043573690

ABSTRACT:
A method of selectively removing a portion of a layer of material on a substrate by oxygen plasma etching utilizing a mask of a resist material comprising a poly(silane sulfone) copolymer.

REFERENCES:
patent: 3893127 (1975-07-01), Kaplan et al.
patent: 4237208 (1980-12-01), Desai et al.
patent: 4289845 (1981-09-01), Bowden et al.
Taylor et al., Technical Paper, SPE Regional Technical Conference, Mid-Hudson Section, Ellenville, NY, Oct., 1979, "Oxygen Plasma Removal of Thin Polymer Film".
Herndon et al., paper entitled, "Inter-Metal Polyimide Insulation for VLSI," Kodak Microelectronics Seminar, Oct., 1979.

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