Method of plasma enhanced silicon oxide deposition

Details Method of plasma enhanced silicon oxide deposition Method of plasma enhanced silicon oxide deposition

1997-08-01

1999-05-18

Beck, Shrive

Coating processes

Measuring, testing, or indicating

427571, 427574, 427579, 4272553, 4272555, C23C16/40

Patent

active

059049529

ABSTRACT:
A method of depositing a hard silicon oxide based film is provided by controllably flowing a gas stream including an organosilicon compound into a plasma. The organosilicon compound is preferably combined with oxygen and helium and at least a portion of the plasma is preferably magnetically confined adjacent to a substrate during the depositing, most preferably by an unbalanced magnetron. These silicon oxide based films may be reproducibly deposited on small or large substrates with preselected properties.

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