Method of planarizing spin-on material layer and...

Details Method of planarizing spin-on material layer and... Method of planarizing spin-on material layer and...

2006-02-14

2006-02-14

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S704000, C438S715000

Reexamination Certificate

active

06998277

ABSTRACT:
A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.

REFERENCES:
patent: 5753566 (1998-05-01), Hwang
patent: 5871811 (1999-02-01), Wang et al.
patent: 6024828 (2000-02-01), Hwang
patent: 6482716 (2002-11-01), Wohlfahrt et al.
patent: 6630397 (2003-10-01), Ding et al.
patent: 6645867 (2003-11-01), Dokumaci et al.

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