Method of planarizing film in semiconductor device

Coating processes – Electrical product produced – Metallic compound coating

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427344, 427369, 4274192, 4274196, 4274193, B05D 512

Patent

active

058243607

ABSTRACT:
A method of planarizing films in a semiconductor device, which is capable of uniformly planarizing films at a good controllability in polished amounts while keeping uniformity in polishing within a wafer surface. The method includes the steps of forming a first film on at least a step portion provided on a base body, covering the step portion with a second film containing phosphorus in an amount of from 6 to 9 wt % and higher in polishing rate than the first film, and polishing the second film to expose the first film formed on the top of the step portion.

REFERENCES:
patent: 4313773 (1982-02-01), Briska et al.

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