Method of planarizing an insulator film using multiple etching s

Details Method of planarizing an insulator film using multiple etching s Method of planarizing an insulator film using multiple etching s

1998-09-11

1999-12-28

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438631, 438714, 438734, 438763, H01L 2128

Patent

active

060081058

ABSTRACT:
The semiconductor masking device of the invention includes a first semiconductor mask for forming an interconnection on a semiconductor substrate and a second semiconductor mask for forming a resist pattern on an insulating film. The first semiconductor mask has three masking areas and the second semiconductor mask has two masking areas. Masking area intervals, that is, the distances between the three masking areas of the first semiconductor mask and the two masking areas of the second semiconductor mask, are all equal to one another.

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patent: 5635428 (1997-06-01), Martin et al.
patent: 5683939 (1997-11-01), Schrantz et al.
patent: 5688720 (1997-11-01), Hayashi

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