Method of planarizing an insulating layer in a semiconductor dev

Details Method of planarizing an insulating layer in a semiconductor dev Method of planarizing an insulating layer in a semiconductor dev

1997-06-19

1998-12-29

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

438692, 438734, 438750, H01L 21302

Patent

active

058536043

ABSTRACT:
The present invention discloses a method of planarizing an insulating layer of a semiconductor device. The method of the present invention comprises a first polishing step for rotating the platen and the rotating carrier holding the wafer contacted with the polishing pad secured to the platen, applying a nitrogen (N.sub.2) gas to the rear surface of the wafer to contact a surface of the wafer with the polishing pad, and applying force to the wafer through the rotating carrier to press the wafer against the polishing pad. Then, a second polishing step for increasing a speed of revolution of the platen and the rotating carrier and decreasing the force applied to the wafer is performed.

REFERENCES:
patent: 3691694 (1972-09-01), Goetz et al.
patent: 5081421 (1992-01-01), Miller et al.
patent: 5536202 (1996-07-01), Appel et al.
patent: 5643405 (1997-07-01), Bello et al.
patent: 5733177 (1998-03-01), Tsuchiya et al.

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