Etching a substrate: processes – Mechanically shaping – deforming – or abrading of substrate
Reexamination Certificate
2007-09-04
2007-09-04
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Mechanically shaping, deforming, or abrading of substrate
C216S013000, C216S038000, C216S092000, C216S100000, C252S079100, C451S036000
Reexamination Certificate
active
10919912
ABSTRACT:
A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.
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Fletcher Yoder
Micro)n Technology, Inc.
Olsen Allan
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