Method of planarizing a layer of material

Details Method of planarizing a layer of material Method of planarizing a layer of material

1995-05-23

1997-09-16

Chu, John S.

Semiconductor device manufacturing: process

Including control responsive to sensed condition

438692, 438693, 438 14, H01L 21465

Patent

active

056680635

ABSTRACT:
A method of planarizing a layer of material having a pre-determined thickness above a circuit feature on a semiconductor device is provided. A first layer of material is formed atop the surface of the semiconductor substrate and circuit feature to a pre-determined thickness. A thin, continuous trace layer of doped silicon oxide material is formed atop the first layer, and then a second layer of material is formed atop the trace layer. The second layer is planarized, and planarization is terminated upon reaching the trace layer, thereby providing a semiconductor with a planar layer.

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