Method of planarizing a dielectric formed over a semiconductor s

Details Method of planarizing a dielectric formed over a semiconductor s Method of planarizing a dielectric formed over a semiconductor s

1990-03-01

1992-04-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437235, 437238, 148DIG7, 156635, 156636, 156645, 511313, 511314, 51132, 5116573, 5116573, 5116576, H01L 21302, H01L 21463

Patent

active

051048280

ABSTRACT:
An improved method for planarizing the surface of an dielectric deposited over a semiconductor substrate. The substrate is pressed face down against a table which has been coated with an abrasive material. In this way, the upper surface of the interlayer dielectric contacts the abrasive. Rotational movement of the wafer relative to the table facilitates removal of the protruding portions of the interlayer dielectric by the abrasive. Post-planarization step height variation is minimized by simultaneously cooling the table and the abrasive material during the abrasive or polishing process. By maintaining the table and the abrasive at about 10 degrees Celsius the step height variation is reduced by a factor of 2 over that normally realized in the prior art.

REFERENCES:
patent: 3615955 (1971-10-01), Regh et al.
patent: 4256535 (1979-12-01), Banks
patent: 4313284 (1982-02-01), Walsh
patent: 4450652 (1984-05-01), Walsh
patent: 4879258 (1989-11-01), Fisher

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