Method of planarization of semiconductor devices

Details Method of planarization of semiconductor devices Method of planarization of semiconductor devices

2005-06-21

2005-06-21

Thomas, David B. (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

Computer controlled

C451S041000, C438S692000

Reexamination Certificate

active

06908361

ABSTRACT:
A method of planarizing a semiconductor device includes the steps of providing a semiconductor substrate, forming a semiconductor component over the semiconductor substrate, depositing a doped silicate glass layer over the semiconductor component using a high density plasma chemical vapor deposition, the doped silicate glass layer forming a protrusion directly over the semiconductor component, and planarizing the doped silicate glass layer by a chemical mechanical polishing process to remove the protrusion.

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