Method of photoelectric detection with reduction of remanence of

Details Method of photoelectric detection with reduction of remanence of Method of photoelectric detection with reduction of remanence of

1989-10-06

1990-08-28

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

35821326, H04N 5214

Patent

active

049527886

ABSTRACT:
The disclosure concerns photosensitive matrices, and especially those using NIPIN or PINIP type phototransistors made of amorphous silicon. To prevent problems of remanence, due to the collecting of holes in the base after an illumination stage, it is proposed to follow the step for reading the illumination signal by a remanence erasure step in which the phototransistor is made conductive in forward or reverse bias, so as to inject, into the base, electrons which will eliminate the holes by recombination. Switching on by reverse bias proves to be more efficient than switiching on by forward bias. The invention is applicable notably to a matrix structure of rows and columns of photosensitive sites in which each site is formed by a NIPIN transistor made of amorphous silicon in series with a reading diode that may be put into reverse conduction.

REFERENCES:
patent: 4617595 (1986-10-01), Berger
patent: 4684993 (1987-08-01), Berger et al.
patent: 4744057 (1988-05-01), Descure et al.

Affiliated with

Also associated with

Rating

Method of photoelectric detection with reduction of remanence of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of photoelectric detection with reduction of remanence of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of photoelectric detection with reduction of remanence of will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1591513