Method of performing read operation of nonvolatile memory...

Details Method of performing read operation of nonvolatile memory... Method of performing read operation of nonvolatile memory...

2009-11-05

2011-10-04

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

08031530

ABSTRACT:
In a method of performing a read operation of a nonvolatile memory device, a selected bit line is precharged. A pass voltage is sequentially applied to all word lines. The pass voltage applied to a word line, selected from among all the word lines, is changed for a read voltage. The read voltage is applied to the selected word line. Data of a memory cell coupled to the selected word line is read.

REFERENCES:
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patent: 6922364 (2005-07-01), Kojima
patent: 6967894 (2005-11-01), Kondo
patent: 2002/0039311 (2002-04-01), Takeuchi et al.
patent: 1020080084031 (2008-09-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Nov. 30, 2010.

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