Method of performing a double-sided process

Details Method of performing a double-sided process Method of performing a double-sided process

2007-12-11

2007-12-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S706000, C438S745000, C438S743000, C257SE21229, C257SE21304, C257SE21257

Reexamination Certificate

active

11277350

ABSTRACT:
A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled into the front scribe lines. Subsequently, the structural pattern is bonded to a carrier wafer with a bonding layer, and a plurality of back scribe lines are defined on the back surface of the wafer. Finally, the filling layer filled in the front scribe lines is removed.

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