Method of patterning the surface of an article using...

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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C438S686000

Reexamination Certificate

active

06893966

ABSTRACT:
There is disclosed a method of patterning an article (10) including a layer (12) of copper formed onto an insulating substrate (11) using a positive microcontact printing (MCP) process. In a preferred embodiment where the metal is copper (Cu) and the substrate is a silicon wafer, the method includes removing the native oxide presents on the Cu in a solution of HCl. Then, a stamp (13′) having a patterned polydimethylsiloxane (PDMS) body (14) is linked with a 0.2 mM solution of pentaerythritol-tetrakis(3-mercaptopropionate) (PTMP) in ethanol for 1 min, to form the inking layer (15′). The stamp is applied on the Cu layer to print a first self-assembled monolayer (SAM) (16′) according to a desired pattern. The article is dipped in a solution of ECT which is then adsorbed only in the non printed regions, forming a second SAM (18) in a configuration that is complementary to the desired pattern. Finally, the printed areas of the Cu layer are removed using a peroxodisulfate etch bath.

REFERENCES:
patent: 5079600 (1992-01-01), Schnur et al.
patent: 5512131 (1996-04-01), Kumar et al.
patent: 6180288 (2001-01-01), Everhart et al.
patent: 6413587 (2002-07-01), Hawker et al.
patent: 6436699 (2002-08-01), Berggren et al.
patent: 6518168 (2003-02-01), Clem et al.

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