Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2005-05-17
2005-05-17
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
C438S686000
Reexamination Certificate
active
06893966
ABSTRACT:
There is disclosed a method of patterning an article (10) including a layer (12) of copper formed onto an insulating substrate (11) using a positive microcontact printing (MCP) process. In a preferred embodiment where the metal is copper (Cu) and the substrate is a silicon wafer, the method includes removing the native oxide presents on the Cu in a solution of HCl. Then, a stamp (13′) having a patterned polydimethylsiloxane (PDMS) body (14) is linked with a 0.2 mM solution of pentaerythritol-tetrakis(3-mercaptopropionate) (PTMP) in ethanol for 1 min, to form the inking layer (15′). The stamp is applied on the Cu layer to print a first self-assembled monolayer (SAM) (16′) according to a desired pattern. The article is dipped in a solution of ECT which is then adsorbed only in the non printed regions, forming a second SAM (18) in a configuration that is complementary to the desired pattern. Finally, the printed areas of the Cu layer are removed using a peroxodisulfate etch bath.
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Delamarche Emmanuel
Geissler Matthias
Wolf Heiko
F. Chau & Associates LLC
Nhu David
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