Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-02-01
1990-11-20
Morgenstern, Norman
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505730, 505728, 427 62, 427 63, 427 431, 156632, 156656, 1566591, B05D 512
Patent
active
049719483
ABSTRACT:
In a method of manufacturing a device comprising a film of an oxide superconducting material which comprises an alkaline earth metal, another metal component, copper and oxygen. A superconductor precursor material comprising copper oxide, alkaline earth metal fluoride and another metal or metal oxide, is provided on a substrate in the form of a film. The film is covered with a diffusion barrier against water in accordance with a pattern which is complementary to a desired pattern of superconducting material. Subsequently, the superconducting material is formed in the uncovered portions of the pattern by means of a treatment at an increased temperature in the presence of water and oxygen.
REFERENCES:
Rice, et al, "Preparation of Superconducting Thin Films of Calcium Strontium Bismuth Copper Oxides by Coevaporation", Appl. Phys. Lett. 52(21), May, 1988, pp. 1828-1830.
Ichikawa, et al, "Effect of Overcoating with Dielectric Films on the Superconductive Properties of the High Tc Y-Ba-Cu-O Films", Jpn. J. Appl. Phys. 27(3), Mar. 1988, L381-383.
Meyer et al, "Spectroscopic Evidence for Passivation of the La.sub.1.85 Sr.sub.0.15 CuO.sub.4 Surface with Gold", Appl. Phys. Lett. 51(14), Oct. 1987, pp. 1118-1120.
Yan et al, "Water Interaction with the Superconducting", YBa.sub.2 Cu.sub.3 O.sub.7 Phase Appl. Phys. Lett., 51(7), Aug. 1987, pp. 532-534.
Dam Bernard
Heijman Maritza G. J.
Van der Kolk Gerrit J.
King Roy V.
Morgenstern Norman
Spain Norman N.
U.S. Philips Corporation
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