Method of patterning resist

Radiation imagery chemistry: process – composition – or product th – Stripping process or element – Element

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430261, 430273, 430503, G03C 190, G03C 168

Patent

active

050155539

ABSTRACT:
A CAD driven photoplotter selectively exposes a photographic imaging layer without affecting the underlying UV sensitive resist on a substrate to make a printed wiring board, for example. The image layer is developed on the board and used as an in situ mask for the underlying UV resist during exposure to UV. After UV exposure, the image layer is peeled off to allow conventional processing of the resist. The in situ mask is preferably applied in the form of a baseless, high contrast, high gamma emulsion layer bonded to the protective cover sheet over the uncured resist. To facilitate application, the emulsion layer is carried by a release paper which is removed before photoplotting. After UV exposure, the cover sheet and emulsion layer are integrally peeled from the resist.

REFERENCES:
patent: 3511657 (1970-05-01), Smith
patent: 3567445 (1971-03-01), Atkinson et al.
patent: 3578451 (1971-05-01), Doggett
patent: 3607346 (1971-09-01), Darlow et al.
patent: 3764329 (1973-10-01), Lee
patent: 3867150 (1975-02-01), Ketley
patent: 4168980 (1979-09-01), LaRossa
patent: 4299912 (1981-11-01), Shiba et al.
patent: 4347305 (1982-08-01), Shiba et al.
patent: 4358530 (1982-11-01), Shiba
patent: 4409316 (1983-10-01), Zeller-Pendrey
patent: 4477562 (1984-10-01), Zeller-Pendrey
patent: 4515877 (1985-05-01), Barzynski et al.
patent: 4555471 (1985-11-01), Barzynski et al.
patent: 4666818 (1987-05-01), Lake et al.
patent: 4670374 (1987-06-01), Bellus et al.
Derwent Abstract of W. German Publ. No. 3509747, 1986.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of patterning resist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of patterning resist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of patterning resist will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1647720

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.