Method of patterning device regions by oxidizing patterned alumi

Details Method of patterning device regions by oxidizing patterned alumi Method of patterning device regions by oxidizing patterned alumi

1981-12-17

1984-07-17

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576W, 148187, 156628, 156667, 427 85, H01L 2176, H01L 21225, H01L 2978, H01L 21308

Patent

active

044604130

ABSTRACT:
A pattern utilized to prepare a diffraction grating, or an element of a semiconductor device, for example a silicon island, or a device isolation pattern or a semiconductor element, such as a MOS FET, is formed by the steps of forming an oxidizable region of a predetermined pattern on a substrate and oxidizing the oxidizable region for forming an oxide region pattern in at least a portion of the sidewalls of the oxidizable region. The resulting pattern, which is extremely fine and formed at a low cost, has a sufficiently large height with respect to its width. Furthermore the pattern can be formed at a relatively low temperature.

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