Method of patterning a substrate by feeding mask defect data...

Details Method of patterning a substrate by feeding mask defect data... Method of patterning a substrate by feeding mask defect data...

2007-05-01

2007-05-01

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S005000, C430S311000, C430S312000

Reexamination Certificate

active

11275178

ABSTRACT:
A method is provided for patterning a substrate. In such method a first mask, for example, a front-end-of-line (“FEOL”) mask is fabricated, the first mask including a plurality of first features such as FEOL features which are usable to pattern regular elements and redundancy elements of a substrate such as a microelectronic substrate and/or a micro-electromechanical substrate. The first mask is tested, i.e., inspected for defects in the features. Thereafter, a second sequentially used mask, for example, a back-end-of-line (“BEOL”) mask is fabricated which includes a plurality of second features, e.g., BEOL features, such features being usable to pattern a plurality of interconnections between individual ones of the regular elements and between the regular elements and the redundancy elements. The regular elements and the redundancy elements are patterned using the first mask and the interconnections between them are patterned using the second mask. As a result, the interconnections are patterned in a way that corrects for the detected defects in the first mask.

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