Method of patterning a photoresist film using a lithographic

Details Method of patterning a photoresist film using a lithographic Method of patterning a photoresist film using a lithographic

2004-12-30

2009-02-17

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C430S005000, C430S311000

Reexamination Certificate

active

07491648

ABSTRACT:
Method for patterning a photoresist film in lithographic process including the steps of: coating the photoresist film on a substrate provided with an under layer; exposing the substrate; firstly developing the photoresist film; exposing a whole surface of the substrate; and secondly developing the photoresist film. The present method has effects on improving an accuracy of formation of pattern and preventing from scum, photoresist residues, and so on, with relatively low cost and short process time.

REFERENCES:
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patent: 2002/0187434 (2002-12-01), Blatchford et al.
patent: 2004/0029026 (2004-02-01), Hayasaki et al.
patent: 2005/0087217 (2005-04-01), Hayasaki et al.
U.S. Appl. No. 11/024,706, filed Dec. 30, 2004, Lee.
U.S. Appl. No. 11/024,721, filed Dec. 30, 2004, Lee.

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